|
UltraCMOS™ Technology
Process Options
0.5 µm UltraCMOS 'FA Process' (Standard Flow)
This is the core process for the 'F' series 0.5 µm UltraCMOS processes.
A wide variety of digital, analogue and optoelectronic products have been
realized in this process. The basic feature set consists of:
- Three NMOS and three PMOS threshold voltages available
- Single polysilicon - silicided
- Three metal layers
0.5 µm UltraCMOS 'FC Process' (Thick Metal + Capacitors)
In this process variant, the final metal layer is thickened to improve
inductor performance over the standard metal layer available in the FA
process. The process also defines high quality metal to metal capacitors
between the two topmost metal layers, enabling very high performance RF
tuned circuits to be fully integrated on-chip.
- Three NMOS and three PMOS threshold voltages available
- Single polysilicon - silicided
- Three metal layers
- Improved inductor performance
- Metal to metal capacitors
0.5 µm UltraCMOS 'FD Process' (Simplified Flow)
A simplified version of the FA Process intended specifically
for low transistor count RF applications not requiring triple
metal. Also available in a further simplification with only
four threshold voltage variants.
- Total of six or four threshold voltages available (3/2 NMOS and 3/2 PMOS)
- Single Polysilicon - silicided
- Two metal layers
0.25 µm UltraCMOS 'GA Process'
This 0.25 µm gate process is intended to extend the already
highly capable FA process RF performance into the deep GHz
regime while maintaining manufacturability on the PSA tool set.
Process features are similar to those of the 0.5 µm UltraCMOS series:
- Three NMOS and three PMOS threshold voltages available
- Silicided diffusions & polysilicon
- Three metal layers
By selecting Peregrine’s UltraCMOS™ technology, you can count on our
expertise and outstanding support throughout the entire foundry process.
|
|
